HIN Device Optimization by Physics-Based S-Parameter Simulation
نویسندگان
چکیده
We demonstrate two-dimensional simulations for design of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) with gatelengths .,:; 150 nm with emphasis on power applications in the Ka-band and of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) . Besides the use of advanced interface and generation/recombination models the simulations yie ld the bias dependence of the small signal equivalent circuit elements.
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